Skip to content
Skip to product information
Description

The DD350N18K is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for a wide range of industrial applications.

Key Features

  • High power handling capacity
  • High switching speed
  • Low conduction and switching losses
  • Robust design for reliable operation

Key Advantages

  • Improved system efficiency
  • Reduced cooling requirements
  • Enhanced system reliability

DD350N18K Diode Module

Regular price $300.00

Description

The DD350N18K is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for a wide range of industrial applications.

Key Features

  • High power handling capacity
  • High switching speed
  • Low conduction and switching losses
  • Robust design for reliable operation

Key Advantages

  • Improved system efficiency
  • Reduced cooling requirements
  • Enhanced system reliability
DD350N18K Diode Module
Drawer Title
Similar Products